NSN Part 202340-001 with 5962-01-079-7736 from Bae Systems Information And Electronic Systems Integration I - Request a Quote

Part Number : 202340-001

Alternate P/N : 202340001

NSN : 5962-01-079-7736 (5962010797736)

Manufacturer : Bae Systems Information And Electronic Systems Integration I

CAGE Code : 81413

FSC : FSC 5962 Microcircuits Electronic

We are glad to inform you that part number 202340-001 It is listed as Seat Poppet. with NSN 5962010797736 is stocked and available. This part number MC08853 is under FSC 5962 Microcircuits Electronic and manufactured by Bae Systems Information And Electronic Systems Integration I. To receive a quick and competitive quote, please fill out the form below in its entirety.

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The National Stock Number (NSN) of the part number 202340-001 indicates that the part is stocked, procured, and issued via federal supply system only. This number is also recognized by the North Atlantic Treaty Organization and is therefore also known as the NATO Stock Number. If you want to know more about the NSN 5962010797736 or any other NSN available on our website, please call us at our toll-free number +1-714-705-4780, or email us at sales@asapaviationsupplies.com.

NSN Information for Part Number 202340-001 with NSN 5962-01-079-7736, 5962010797736

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-079-7736 Item Description: Microcircuit Memory	5962	010797736	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	7		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
202340-001	1	2	3

Characteristics Data of NSN 5962-01-079-7736, 5962010797736

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND WENABLE AND WDECODED OUTPUT
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN13 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC650 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 650 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPERAM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81413-202340 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT

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